This document is a datasheet for the Fairchild Semiconductor FDS4435BZ, a P-Channel PowerTrench MOSFET designed for power management and load switching applications in notebook computers and portable battery packs. The device features a low on-state resistance and high power handling capability, utilizing advanced trench technology.
| Drain to Source Voltage | -30 V |
|---|---|
| Gate to Source Voltage | ±25 V |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 25 °C/W |
| Package Type | SO-8 |
| Max rDS(on) at VGS = -10V | 20m |
The maximum continuous drain current is -8.8A at TA= 25°C.
The operating and storage junction temperature range is -55 to +150 °C.
The maximum on-state resistance is 20mΩ at VGS = -10V and ID = -8.8A.