This is a document about the FDS4488 30V N-Channel PowerTrench MOSFET. The product is manufactured using Fairchild Semiconductor's advanced PowerTrench process, which aims to minimize on-state resistance while maintaining superior switching performance. It is suitable for low voltage and battery-powered applications that require low in-line power loss and fast switching.
This document is a technical datasheet for the Fairchild Semiconductor FDS4488, an N-Channel MOSFET manufactured using the advanced PowerTrench process. The device is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for low voltage and battery-powered applications.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | ±25 V |
| On-Resistance @ 10V Gate | 22 mΩ |
| Total Gate Charge (Typical) | 9.5 nC |
| Operating Junction Temperature Range | -55 to +175 °C |
The device uses Fairchild Semiconductor's advanced PowerTrench process tailored to minimize on-state resistance.
It is well suited for DC/DC converters, load switches, and motor drives in low voltage or battery powered applications.
The maximum pulsed drain current rating is 40 A.