Supertex 2N7008 is a N-channel enhancement-mode vertical DMOS FET with high breakdown voltage, high input impedance, low input capacitance and fast switching speed. It is ideally suited for a wide range of switching and amplifying applications.
This document is a datasheet for the Supertex 2N7008, an N-Channel Enhancement-Mode Vertical DMOS FET. The device is designed for switching and amplifying applications where high breakdown voltage, high input impedance, and fast switching speeds are required. It features a vertical DMOS structure utilizing Supertex's silicon-gate manufacturing process, offering power handling capabilities similar to bipolar transistors with the high input impedance of MOS devices.
| Continuous Drain Current (Ip) | 230mA |
|---|---|
| Operating Temperature Range | -55°C to +150°C |
| Gate Threshold Voltage (Vgs(th)) | 1 V to 2.5 V |
| Input Capacitance (Ciss) | 50 pF |
| Turn-ON Time (ton) | 20 ns |
The operating and storage temperature range is from -55°C to +150°C.
The device can operate and be stored between -55°C and +150°C.
The maximum continuous drain current is 230mA.
The typical static drain-to-source on-state resistance is 7.5 ohms.