Industrial

The FQP11N40C/FQPF11N40C 400V N-Channel MOSFET is a low RDS(on), high voltage N-channel MOSFET manufactured by Fairchild that can be used in high-efficiency switched mode power supplies, active power factor correction, and half-bridge topology electronic lamp ballasts.

The document describes the features and characteristics of QFET products.

FQP13N06L is a 60V logic N-channel MOSFET manufactured by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse resistance, and is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FQP13N10 is a 100V N-channel MOSFET from Fairchild with low on-state resistance, fast switching, 100% avalanche tested, suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control

The FQP13N10L 100V LOGIC N-Channel MOSFET is a high performance MOSFET device produced by Fairchild. It features low RDS(on), low gate charge, low Crss, fast switching, etc. It is suitable for applications such as high efficiency switching DC/DC converters and DC motor control.

This document describes the features and characteristics of the FQP13N50/FQPF13N50 500V N-Channel MOSFET products, which are produced using Fairchild's proprietary DMOS technology. These products have low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts based on half bridge.

This document introduces the features and characteristics of QFET products, including QFET's structure principle, working principle, application scenarios, etc.

This document is a white paper on QFET technology. It introduces the features and characteristics of QFET.

QFET QFET QFET QFET is a new generation of high performance, high density and high efficiency silicon carbide power device launched by Intel Corporation. This device uses Intel's unique silicon carbide substrate technology, which has a very high critical breakdown voltage and a very low on-resistance, and also has excellent thermal shock and thermal cycling characteristics, which can meet the harsh requirements of high power and high density applications.

NTB90N02/D NTB90N02, NTP90N02 is N−Channel power MOSFET with a maximum voltage of 24 V and a maximum current of 90 A. The product is suitable for low voltage, high speed switching applications such as power supplies, converters, motor controls and bridge circuits.

NTB90N02 and NTP90N02 are power MOSFETs designed for low voltage, high speed switching applications in power supplies, converters, power motor controls, and bridge circuits.

NTP85N03, NTB85N03 is an N-channel MOSFET with a rated voltage of 28 V and a rated current of 85 A, designed for low voltage, high speed switching applications such as power supplies, converters and motor controllers and bridge circuits.

This document describes the features and characteristics of the NTP75N06 and NTB75N06 power MOSFETs. They are designed for low voltage, high speed switching applications in power supplies, converters, power motor controls, and bridge circuits.

NTB75N03R/D is a power MOSFET product with N-channel characteristics, 75 amps and 25 volts. It adopts the Planar HD3e process, which provides fast switching performance, low conduction loss, and low driver loss.

The FQA9N90C_F109 900V N-Channel MOSFET is a power field effect transistor with low gate charge, low on-state resistance and fast switching characteristics. It is suitable for high-efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half-bridge topology.