ON Semiconductor NTP85N03/NTB85N03 Power MOSFET Datasheet

NTP85N03, NTB85N03 is an N-channel MOSFET with a rated voltage of 28 V and a rated current of 85 A, designed for low voltage, high speed switching applications such as power supplies, converters and motor controllers and bridge circuits.


ON Semiconductor NTP85N03/NTB85N03 Power MOSFET Datasheet - cover page
Brand
ON Semiconductor
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
84 KB
Published
12 July, 2012
Updated
30 September, 2023
MD5 checksum
3438CE9CFE216C4825F655288BE40BBD

About this manual

This document provides technical specifications and characteristics for the NTP85N03 and NTB85N03 N-Channel Power MOSFETs. These devices are designed for low voltage, high speed switching applications in power supplies, converters, power motor controls, and bridge circuits. They are available in TO-220 and D2PAK packages.

What's inside

  • Typical Applications
  • Maximum Ratings
  • Electrical Characteristics
  • Switching Characteristics
  • Safe Operating Area
  • Package Information
  • Ordering Information

Specifications

Drain-to-Source Voltage28 V
Continuous Drain Current85 A
Total Power Dissipation80 W
Operating Temperature Range-55°C to +150°C
Package TypesTO-220AB, D2PAK

Frequently asked questions

What are the typical applications for these MOSFETs?

They are designed for low voltage, high speed switching applications in power supplies, converters, power motor controls, and bridge circuits.

What is the maximum continuous drain current?

The maximum continuous drain current at Tg = 25°C is 85 A.

What is the drain-to-source breakdown voltage?

The minimum drain-to-source breakdown voltage is 28 V.

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