NTB90N02 and NTP90N02 are power MOSFETs designed for low voltage, high speed switching applications in power supplies, converters, power motor controls, and bridge circuits.
This document provides technical specifications and application information for the NTB90N02 and NTP90N02 N-Channel Power MOSFETs. These devices are designed for low voltage, high speed switching applications in power supplies, converters, motor controls, and bridge circuits.
The datasheet details maximum ratings including a drain-to-source voltage of 24V and continuous current up to 90A. It includes electrical characteristics such as on-resistance, capacitance values, and switching parameters. Additionally, the document offers guidance on using the D2PAK surface mount package with recommended footprint dimensions.
| Total Power Dissipation (Pd) | 85 W |
|---|---|
| Operating and Storage Temperature Range | -55 °C to +150 °C |
| Junction-to-Case Thermal Resistance (RθJC) | 1.55 °C/W |
| Static Drain-to-Source On-Resistance (RDS(on)) | 7.5 mΩ @ 45V |
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
The devices are available in N-Channel D2PAK and TO-220 packages.