Industrial

This document describes the features and characteristics of QFET products.

This document describes the features and characteristics of the FQD8P10 / FQU8P10 100V P-Channel MOSFET. These transistors are produced using Fairchild's proprietary planar stripe DMOS technology, which provides low on-state resistance, superior switching performance, and the ability to withstand high energy pulses. They are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

QFET is a new type of RF power device with high frequency, high power, high efficiency, high reliability and low cost. QFET has broad application in RF communication, radar, electronic countermeasure, satellite communication, microwave heating and other fields.

This document describes the features and characteristics of the FQH44N10_F133 N-Channel MOSFET produced by Fairchild Semiconductor Corporation. The transistor is created using advanced DMOS technology, which minimizes on-state resistance, provides superior switching performance, and can withstand high energy pulse in avalanche and commutation mode. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

FQH8N100C is a 1000V N-channel MOSFET produced by Fairchild. It has a current of 8A, a RDS(on) of 1.45Ω @VGS = 10 V, low gate charge (typical 53nC) and Crss (typical 16pF), fast switching, 100% avalanche tested and improved dv/dt capability.

This document describes the features and characteristics of the FQB13N50C/FQI13N50C 500V N-Channel MOSFET. It is produced using Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in the avalanche and commutation mode.

This document introduces the features and characteristics of the QFET product, which can be used for digital control of circuits.

This data sheet provides the product specifications of FQB4N90 / FQI4N90, including pin definition, package, maximum working voltage, maximum working current, switching speed, gate leakage and other parameters.

This document introduces the FQB5N60C/FQI5N60C N-channel MOSFET characteristics, including voltage, current, power, switching speed, etc.

The FQL40N50 is a 500V N-channel MOSFET manufactured by Fairchild with a continuous current of 40A and a 0.11 Ohm on-state resistance.

FQL40N50F is an N-channel MOSFET produced by Fairchild. This device uses Fairchild's proprietary planar stripe DMOS technology, which has low on-resistance, high switching speed and high dv/dt capability.

FQN1N50C is a 500V N-channel MOSFET with features of low RDS(on), low gate charge and fast switching, suitable for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.

FQN1N60C is a 600V N-channel MOSFET with features such as 0.3A, 600V, RDS(on) = 11.5 Ω @ VGS = 10V, low gate charge (typical 4.8 nC), low Crss (typical 3.5pF), fast switching and 100% avalanche tested.

This document is the datasheet of FQNL2N50B 500V N-Channel MOSFET, which introduces the features and characteristics of this device, including rated working voltage, current, gate voltage, gate capacitance, etc.

This datasheet provides information on FQP10N20C/FQPF10N20C, including product parameters, features, and applications.