This document introduces the FQB5N60C/FQI5N60C N-channel MOSFET characteristics, including voltage, current, power, switching speed, etc.
This document is a technical datasheet for the Fairchild FQB5N60C and FQISN60C N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
| Single Pulsed Avalanche Energy | 210 mJ |
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The device supports a continuous drain current of 4.5 A at 25°C and 2.6 A at 100°C.
The device can withstand a single pulsed avalanche energy of up to 210 mJ.
The device operates and stores within a temperature range of -55 to +150 °C.