Industrial

The FQT7N10 100V N-Channel MOSFET is a power field effect transistor produced by Fairchild. It has low gate charge, low drain-source capacitance, fast switching, and improved dv/dt capability.

FQT7N10L is a 100V LOGIC N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has features such as 1.7A, 100V, RDS(on) = 0.35Ω @VGS = 10 V, low gate charge (typical 4.6 nC), low Crss (typical 12 pF).

This document describes the features and characteristics of the QFET TM FQD20N06L / FQU20N06L products released in March 2009. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary planar stripe DMOS technology. This technology has been specially designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

BC307/308/309 are PNP type silicon transistors manufactured by Fairchild Semiconductor Corporation. The transistor has a collector-emitter voltage of -50 to -30 V, a collector-emitter breakdown voltage of -45 to -25 V, an emitter-base voltage of -5 V, a collector current of -100 mA and a collector power dissipation of 500 mW. The transistor is typically used in switching and amplifier applications.

FQP11N50CF/FQPF11N50CF is a 500V N-Channel MOSFET with a maximum current of 11A and an on-resistance of 0.55 ohms. The device is manufactured using Fairchild's proprietary planar stripe DMOS technology and features low on-resistance, low gate charge, low Crss, fast switching, fast recovery body diode and 100% avalanche testing. It is suitable for high efficiency switched mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.

This document describes the features and characteristics of FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET, including 10A current, 500V voltage, low gate charge and low Crss, fast switching, improved dv/dt capability.

This document describes the FQP9P25 P-Channel MOSFET product. The product is produced using Fairchild's proprietary technology, with features of low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for high efficiency switching DC/DC converters.

This document describes the features and characteristics of the FQP9N90C/FQPF9N90C 900V N-Channel MOSFET produced by Fairchild Semiconductor Corporation. These power field effect transistors utilize Fairchild's proprietary planar stripe DMOS technology to achieve low on-state resistance, superior switching performance, and high energy pulse withstand capabilities in avalanche and commutation modes. These devices are well-suited for high efficiency switched mode power supplies.

FQP9N30 is a 300V N-channel MOSFET with a maximum current of 9.0A, fast switching speed, high voltage pulse resistance, suitable for high efficiency switching DC/DC converters, switch mode power supply.

The FQP8P10 is a 100V P-channel MOSFET from Fairchild with low on-state resistance, low gate charge and fast switching characteristics. It is suitable for low voltage applications such as audio amplifier, high efficiency switching DC/DC converter and DC motor control

This is the PDF datasheet of FQP8N90C/FQPF8N90C 900V N-Channel MOSFET

This document describes the features and characteristics of the FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET, including low on-state resistance, fast switching speed, and high energy pulse withstand capability.

FQP7P06 is a P-channel MOSFET produced by Fairchild, which has low on-resistance, high switching speed, low gate charge and high dv/dt capability.

This document describes the 800V N-Channel MOSFET products, FQP7N80C/FQPF7N80C. These products are produced using Fairchild's proprietary DMOS technology, which provides low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are well suited for high efficiency switch mode power supplies.