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QFET is a new type of power switch device developed by ON Semiconductor. It has the advantages of small size, large power, fast switching speed, and low switching loss. QFET is suitable for various power applications, such as switch power supplies, motor drives, LED drives, etc.
The ASM161 and ASM162 are cost effective, low power supervisory circuits that monitor power supplies in microprocessor, microcontroller and digital systems. They have an improved manual reset architecture, low power consumption, and are ideal for use in portable and battery operated equipment.
FQPF6N80T is a 800V N-channel MOSFET from Fairchild with a maximum continuous current of 3.3A and a 1.95 ohm on-state resistance, low gate charge and fast switching characteristics.
FQPF70N10 is a 100V N-channel MOSFET from Fairchild that uses Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse handling capability. This device is well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
This document introduces an N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulse in avalanche and commutation mode. It is suitable for high efficiency switch mode power supplies.
The FQP7N65C/FQPF7N65C is a N-channel enhancement mode power field effect transistor produced by Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology, which has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
FQPF85N06 is a 60V N-Channel MOSFET produced by Fairchild. It has a maximum output current of 53A, a switch resistance of 0.010Ω, a gate charge of 86 nC and a parasitic capacitance of 165 pF, which is suitable for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.
FQP8N60C/FQPF8N60C is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse resistance in avalanche and commutation mode. This device is suitable for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
This document is the product manual of FQPF8N60CF 600V N-Channel MOSFET. It introduces the features and characteristics of the product, including current, voltage, switching speed, etc.
This datasheet provides the feature parameters of FQP9N25C/FQPF9N25C, including rated voltage, continuous current, switching frequency, gate voltage and on-state resistance.
