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FQPF20N06 is a 60V N-Channel MOSFET produced using Fairchild's DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability. It is suitable for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.

FQPF20N06L is a 60V Logic N-Channel MOSFET. It features 15.7A maximum current, 0.055Ω RDS(on) and low gate charge and is well suited for low voltage applications.

This manual introduces the functions and usage of QFET.

FQPF22P10 is a 100V P-Channel MOSFET manufactured by Fairchild with low on-state resistance, superior switching performance, high energy pulse withstand capability, low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and 175°C maximum junction temperature rating.

This white paper is published by QFET company, introducing the features and characteristics of QFET products.

The FQPF27P06 is a 60V P-channel MOSFET that features low gate charge, low Crss, and fast switching. It is well-suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

This document describes the features and characteristics of the FQPF2N70 QFET TM FQPF2N70 700V N-Channel MOSFET, including low on-state resistance, superior switching performance, and ability to withstand high energy pulse in the avalanche and commutation mode. Suitable for high efficiency switch mode power supply.

FQPF2N80 is a 800V N-channel MOSFET produced by Fairchild. Its features are: 1.5A, 800V, RDS(on) = 6.3Ω @VGS = 10 V, low gate charge (typical 12 nC), low Crss (typical 5.5 pF), fast switching, 100% avalanche tested, improved dv/dt capability.

This datasheet provides the specifications of Diotec B…C 3200-2200, including rated current, input voltage, package size, weight, maximum rated voltage, maximum peak reverse voltage, maximum peak forward current, fuse rating, peak forward current, operating temperature range, storage temperature range

FQPF30N06L is a 60V logic N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its features include low on-state resistance, superior switching performance, high energy pulse endurance and low gate charge and Crss. This device is well suited for low voltage applications such as automotive, DC/DC converters and high efficiency switching for power management in portable and battery operated products.

FQPF33N10 is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, superior switching performance and high energy pulse withstandability. It is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters and DC motor control.

FQPF33N10L 100V LOGIC N-Channel MOSFET is a product produced by Fairchild Semiconductor. It uses Fairchild's proprietary planar stripe DMOS technology, which has the advantages of low on-state resistance, superior switching performance, high energy pulse tolerance, etc. This product is suitable for low voltage applications such as high efficiency switching DC/DC converters and DC motor control.

This datasheet provides absolute maximum ratings, thermal characteristics, drain-source voltage, drain-source current, gate-source voltage, single pulsed avalanche energy, avalanche current, repetitive avalanche energy, peak diode recovery dv/dt, power dissipation, operating and storage temperature for FQPF47P06.

The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages, and signal processing circuits of television receivers. The PNP complement for BC107 is BC177.