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The document describes the features and characteristics of the NDT456P P-Channel Enhancement Mode Field Effect Transistor manufactured in December 1998. The transistor has a drain-source voltage of -30V, gate-source voltage of ±20V, and maximum drain current of -7.5A. It is produced using a high-density cell design, providing extremely low on-state resistance and high power and current handling capability. It is suitable for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
RFD14N05L, RFD14N05LSM, RFP14N05L are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
This document describes the features and characteristics of RFD16N05L and RFD16N05LSM, which are N-Channel logic level power MOSFET devices. It includes their power control, conductance, gate bias range, special gate oxide design, switching speed, etc.
RFD16N05, RFD16N05SM 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs are manufactured by Fairchild Semiconductor Corporation. It has features such as 16A, 50V, rDS(ON) = 0.047 Ω, Temperature Compensating PSPICE® Model, Peak Current vs Pulse Width Curve, UIS Rating Curve, 175oC Operating Temperature.
RFP12N10L 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET is a N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers.
This document describes the features and characteristics of the RFG50N06, RFP50N06, and RF1S50N06SM N-Channel power MOSFETs from Fairchild Semiconductor Corporation. These MOSFETs are manufactured using the MegaFET process and provide outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM are N-channel power MOSFETs manufactured by Fairchild Semiconductor Corporation. They have a feature of 70A, 60V, 0.014 Ohm. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Si3443DV is a P-Channel 2.5V specified PowerTrench MOSFET. It has a drain-source voltage of -20V and a gate-source voltage of ±8V. The continuous drain current is -4A, and the pulsed drain current is -20A. The device has a maximum power dissipation of 1.6W. The operating and storage junction temperature range is -55 to +150°C.
This is the official datasheet for Si3457DV. It is a single P-channel logic level PowerTrench MOSFET produced by Fairchild. It has been optimized for battery power management applications.
This document describes the features and characteristics of Fairchild Semiconductor's SI4435DY 30V P-Channel PowerTrench MOSFET, which is suitable for power management, load switch, and battery protection applications.
