This datasheet lists the absolute maximum ratings, thermal characteristics, small signal characteristics and other information for the FSB619 NPN Low Saturation Transistor.
The document describes the Fairchild FSB619, an NPN Low Saturation Transistor designed with high current gain and low saturation voltage. It is packaged in a SuperSOT-3 (SOT-23) package and supports continuous collector currents up to 3A.
Key electrical characteristics include a Collector-Emitter Voltage rating of 50V, a DC Current Gain ranging from 100 to over 300 depending on the current level, and specific saturation voltage values at various operating conditions. The device operates within a junction temperature range of -55°C to +150°C.
| Collector-Emitter Voltage (Vceo) | 50 V |
|---|---|
| Collector-Base Voltage (Vcbo) | 50 V |
| Emitter-Base Voltage (VeBo) | 5 V |
| Collector Current - Continuous | 2 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation (Pp) | 500 mW |
| Thermal Resistance, Junction to Ambient | 250 °C/W |
The device supports a continuous collector current of up to 2A according to the absolute maximum ratings, though the introduction mentions designs up to 3A.
The device operates within a junction temperature range of -55°C to +150°C.
The Collector-Emitter Breakdown Voltage (BVcEo) is 50V when Ic = 10 mA.