FSB660 / FSB660A are PNP low saturation transistors designed with high current gain and low saturation voltage, with a continuous collector current of up to 2A.
This document provides the design specifications, absolute maximum ratings, and electrical characteristics for the Fairchild Semiconductor FSB660 and FSB660A devices. These are PNP Low Saturation Transistors packaged in a SuperSOT-3 (SOT-23) case.
| Collector-Emitter Voltage (VCEO) | 60 V |
|---|---|
| Collector Current - Continuous | 2 A |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation | 500 mW |
| Thermal Resistance, Junction to Ambient | 250 °C/W |
The devices are designed with a SuperSOT-3 (SOT-23) package.
The devices support collector currents up to 2A continuous.