Industrial

The PQxxxEH01Z series is a low power-loss voltage regulator with features such as low voltage operation, large output current, and low dissipation current. This series of products is widely used in peripheral equipment of personal computers and power supplies for various electronic equipment such as DVD players or STBs.

This product is an N-channel enhancement mode power transistor with automotive AEC Q101 qualification, MSL1 high temperature reflow, 175°C operating temperature, green environmental protection package and other features

IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS®-T power transistors feature low on-resistance, automotive AEC Q101 qualification, and high temperature operation.

IPB15N03L is an N-channel low-resistance power MOSFET with a rated drain voltage of 30 V and a maximum on-resistance of 12.6 mΩ, suitable for fast switching buck converters

IPB14N03LA IPI14N03LA, IPP14N03LA are ideal N-channel logic level power transistors for high-frequency dc/dc converters, with excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), superior thermal resistance and 175 °C operating temperature.

IPB10N03L is a logic level N-channel low voltage switch device produced by Infineon, which has the characteristics of low on-resistance, excellent gate charge x on-resistance product (FOM), superior thermal resistance, 175°C operating temperature, avalanche rated, dv/dt rated, and is ideal for fast switching buck converters.

This document describes the features of IPB09N03LA, IPI09N03LA, and IPP09N03LA OptiMOS®2 power transistors, including their suitability for high-frequency DC/DC converters, N-channel, logic level, excellent gate charge x RDS(on) product (FOM), very low on-resistance, superior thermal resistance, 175°C operating temperature, and dv/dt rating.

The characteristics of IPB08CN10N G IPI08CN10N G IPP08CN10N G OptiMOS®2 power transistor include N-channel, normal level, excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), 175 °C operating temperature, lead-free lead plating; RoHS compliant, qualified according to JEDEC1) for target application, ideal for high-frequency switching and synchronous rectification.

This document describes the features and characteristics of the IPP07N03L and IPB07N03L OptiMOS Buck converter series products released on October 17, 2002. These products are N-channel logic level MOSFETs with low on-resistance, excellent gate charge x on-resistance product, superior thermal resistance, 175°C operating temperature, avalanche rated, and dv/dt rated. They are ideal for fast switching buck converters.

This document describes the features and characteristics of IPB05N03LA, IPI05N03LA, and IPP05N03LA OptiMOS®2 power transistors, including their suitability for high-frequency dc/dc converters, excellent gate charge x R DS(on) product, very low on-resistance, superior thermal resistance, and 175°C operating temperature.

This document provides technical parameters of IPP05N03L and IPB05N03L.

The IPB04N03LA is a N-channel power MOSFET from Infineon that features high-frequency dc/dc converters, logic level, very low on-resistance, excellent thermal resistance, etc.

This document introduces the features and characteristics of the two products IPP04N03L and IPB04N03L, including their maximum ratings, electrical characteristics, thermal characteristics, etc.

The document introduces three models of OptiMOS®2 power transistors: IPB03N03LA, IPI03N03LA, and IPP03N03LA. These transistors are ideal for high-frequency dc/dc converters and have excellent gate charge and on-resistance, as well as superior thermal resistance. They have an operating temperature of 175°C and are rated for reverse diode dv/dt. The document also provides parameter and package information for each model.

This application note is intended to help the system designer utilize the benefits of the FAN2011 and FAN2001 families of high performance step-down DC-DC regulators, to avoid PCB layout related problems and maximize overall system performance. The basic concept of “star grounding” is presented and ways of implementing star grounding for systems like a cell phone, are shown.