Infineon IPB14N03LA/IPI14N03LA/IPP14N03LA Manual(1)

IPB14N03LA IPI14N03LA, IPP14N03LA are ideal N-channel logic level power transistors for high-frequency dc/dc converters, with excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), superior thermal resistance and 175 °C operating temperature.


Infineon IPB14N03LA/IPI14N03LA/IPP14N03LA Manual(1) - cover page
Brand
Infineon
Category
Power Management
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
345 KB
Published
13 July, 2012
Updated
30 September, 2023
MD5 checksum
D5519E2C410379576570B8F77757A0CF

About this manual

This document is a product summary and technical specification sheet for the Infineon IPB14N03LA, IPI14N03LA, and IPP14N03LA OptiMOS power transistors. The devices are N-channel logic-level MOSFETs designed specifically for high-frequency DC/DC converters.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Gate Charge Characteristics
  • Reverse Diode
  • Package Outline

Specifications

Continuous drain current (Tc=25°C)30 A
Operating temperature range-55 ...175 °C
Package typesP-TO263-3-2, P-TO262-3-1, P-TO220-3-1

Frequently asked questions

What is the maximum continuous drain current for this transistor?

The device can handle a continuous drain current of up to 30 A when the case temperature is 25 °C.

What is the maximum operating junction temperature?

This power transistor can operate at temperatures as high as 175 °C.

How much energy can this device absorb in a single avalanche pulse?

The transistor is rated to withstand an avalanche energy of 60 mJ for a single pulse with a current of 24 A and a voltage of 25 V.

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