This product is an N-channel enhancement mode power transistor with automotive AEC Q101 qualification, MSL1 high temperature reflow, 175°C operating temperature, green environmental protection package and other features
This document is a technical datasheet for the Infineon IPB80N08S2-07 family of OptiMOS Power Transistors. It includes three specific ordering codes: IPB80N08S2-07, IPP80N08S2-07, and IPI80N08S2-07.
| Continuous drain current (Tc=25°C) | 80 A |
|---|---|
| Operating temperature range | -55 ... +175 °C |
| Drain-source breakdown voltage | 75 V |
| Power dissipation (Tc=25°C) | 300 W |
| Thermal resistance, junction-case | 0.5 K/W |
The maximum continuous drain current is 80 A when the temperature is 25°C.
The device can operate at temperatures up to 175°C.
The maximum power dissipation is 300 W at a temperature of 25°C.