IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS®-T power transistors feature low on-resistance, automotive AEC Q101 qualification, and high temperature operation.
This document is a datasheet for the Infineon IPB77N06S3-09, IPI77N06S3-09, and IPP77N06S3-09 OptiMOS-T Power-Transistors. These devices are N-channel enhancement mode power transistors qualified for automotive applications (AEC Q101) with an operating temperature range of -55 to +175 °C. The datasheet provides product summaries, maximum ratings, and electrical characteristics for three different package types: PG-TO263-3-2, PG-TO262-3-1, and PG-TO220-3-1.
| Continuous drain current | 77 A |
|---|---|
| Avalanche energy | 170 mJ |
| Drain gate voltage | 55 V |
| Gate source voltage | +20 V |
| Power dissipation | 107 W |
| Operating temperature | -55 ... +175 °C |
| Drain-source breakdown voltage | 55 V |
| Drain-source on-state resistance | 7.7 mΩ |
| Thermal resistance, junction-case | 1.4 K/W |
The operating and storage temperature range is from -55 to +175 °C.
Yes, the product is Automotive AEC Q101 qualified.
The available packages are PG-TO263-3-2, PG-TO262-3-1, and PG-TO220-3-1.