Industrial

NE674 is a L to Ku band low noise GaAs MESFET from NEC, featuring a low noise figure with high associated gain employing a recessed 0.3 micron gate and triple epitaxial technology. This device is suitable for both amplifier and oscillator applications. This device is housed in a solder sealed hermetic, metal ceramic package for high reliability in space applications.

The NEC NE677M04 is a high frequency NPN transistor with high gain bandwidth, high output power and high linear gain. The product is manufactured using NEC's HFT3 wafer process and is packaged in an M04 package with a SOT-343 footprint and a height of only 0.59mm.

The NE678M04 is a medium power NPN silicon high frequency transistor with features such as high gain bandwidth, high output power, and high linear gain. It is suitable for applications from 100 MHz to 3 GHz, making it an excellent choice for the driver stage in mobile or fixed wireless applications. The NE678M04 is fabricated using NEC's HFT3 wafer process and has a transition frequency of 12 GHz.

NE66719 is NEC's NPN silicon high frequency transistor, ideal for oscillator or low noise amplifier applications at 2 GHz and above. This device is fabricated using NEC's UHS0 25 GHz fT wafer process.

The NE664M04 is a NPN silicon high frequency power transistor from NEC. It features a high gain bandwidth, high output power and high linear gain, making it an excellent choice for the output or driver stage for mobile or fixed wireless applications.

NE662M16 is a NPN silicon high frequency transistor from NEC. It features high gain bandwidth (fT=25GHz), low noise figure (NF=1.1dB@2GHz), high maximum stable gain (20dB@f=2GHz) and low profile package (M16) with a height of just 0.50mm.

NE661M04 is an NPN silicon RF transistor produced by NEC, which has the characteristics of low noise, high gain and low current.

NE661M04 is a high frequency NPN silicon transistor with high gain bandwidth, high power gain, low noise figure and high maximum stable gain.

The NE651R479A is a 0.4W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It offers high linear gain, high efficiency, excellent distortion performance, and can serve as a driver amplifier for NE6510179A and NE6510379A.

The NE6510379A is a 3W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It has high linear gain, high efficiency, and excellent distortion.

NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power at 3.5V and 3 watts of output power at 5V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.

The NE650R279A is a 0.2W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc.

NE6501077 is a power GaAs field effect transistor that provides high gain, high efficiency, and high output power in the L, S band.