The NE651R479A is a 0.4W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It offers high linear gain, high efficiency, excellent distortion performance, and can serve as a driver amplifier for NE6510179A and NE6510379A.
The NEC NE651R479A is an N-channel GaAs HJ-FET designed for middle power transmitter applications in mobile communication and wireless PC LAN systems. It delivers 0.4W of output power with high linear gain, high efficiency, and excellent distortion, serving as a driver amplifier for other NEC models like the NE6510179A and NE6510379A.
The document provides absolute maximum ratings, recommended operating conditions, and detailed electrical characteristics including output power, drain current, power added efficiency, and linear gain at frequencies of 900 MHz and 1.9 GHz. It also includes typical RF performance graphs, S-parameters, application circuit examples for 900 MHz and 1.9 GHz, package dimensions, PCB layout recommendations, and soldering conditions.
| Output Power (Typical) @ 900 MHz | +27.0 dBm |
|---|---|
| Output Power (Typical) @ 1.9 GHz | +29.5 dBm |
| Linear Gain (Typical) @ 900 MHz | 14.0 dB |
| Linear Gain (Typical) @ 1.9 GHz | 12.0 dB |
| Power Added Efficiency (Typical) | 60 % |
| Channel Temperature (Max) | 150 °C |
| Total Power Dissipation | 25 W |
The typical output power is +29.5 dBm when the supply voltage is 5.0 V and the input power is +15 dBm.
The recommended operating drain to source voltage ranges from 3.5 V to 5.5 V.