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M74HC132 is a CMOS QUAD 2-input SCHMITT NAND GATE with high speed, low power dissipation, high noise immunity, symmetrical output impedance, balanced propagation delays and wide operating voltage range.
This document describes the features and characteristics of the M74HC125, a high-speed CMOS quad buffer, including high-speed transmission, low power dissipation, high noise immunity, symmetrical output impedance, balanced propagation delays, and wide operating voltage range.
M74HC109 is a high speed CMOS dual J-K flip-flop with preset and clear, fabricated with silicon gate C2MOS technology. In accordance with the logic level on the J and K input this device changes state on positive going transition of the clock pulse. CLEAR and PRESET are independent of the clock and are accomplished by a logic low on the corresponding input. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
The document describes the features and characteristics of the M74HC107 model, including high speed, low power consumption, high noise immunity, and symmetrical output impedance.
The M74HC08 is a high speed CMOS QUAD 2-input AND gate fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
M74HC04 is a high speed CMOS hex inverter fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
The M74HC03 is an high speed CMOS QUAD 2-INPUT OPEN DRAIN NAND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. This device can, with an external pull-up resistor, be used in wired AND configuration. This device can be also used as a led driver and in any other application requiring a current sink. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
The M74HC02 is a high speed CMOS QUAD 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
M74HC00 is a high speed CMOS QUAD 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
This datasheet provides the specifications of NEC's NE681 series of NPN transistors. This series of transistors has high gain bandwidth product, low noise figure and high associated gain, suitable for low noise, high gain, low cost amplifier applications.
NEC's NE680 series is an NPN epitaxial silicon transistor designed for low noise, high gain, and low-cost applications. Suitable for applications up to 6 GHz. Both the chip and micro-x versions of NE680 are suitable for applications up to 6 GHz. The NE680 die is also available in six different low-cost plastic surface mount package styles. The high fT of NE680 makes it ideal for low voltage/low current applications, as low as 0.5 V / 0.5 mA. The maximum IC for the NE680 series is 35 mA. For higher current applications, see the NE681 series.
