The NE6510379A is a 3W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. It has high linear gain, high efficiency, and excellent distortion.
The NEC NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications in mobile communication systems. It delivers high output power with high linear gain, high efficiency, and excellent distortion characteristics. The device operates with a 1/3 duty pulse operation and is available in a 79A package.
| Output Power (900 MHz) | +35 dBm typ. |
|---|---|
| Output Power (1.9 GHz) | +32.5 dBm typ. |
| Linear Gain (900 MHz) | 13 dB typ. |
| Linear Gain (1.9 GHz) | 8 dB typ. |
| Power Added Efficiency (900 MHz) | 58% typ. |
| Channel Temperature | 150 °C |
| Total Power Dissipation | 18 W |
The typical output power is +35 dBm at 900 MHz with a 1/3 duty cycle.
The recommended operating drain to source voltage is 3.5 V.
Yes, it is an electrostatic sensitive device and must be handled at a static-free workstation.