NE6501077 is a power GaAs field effect transistor that provides high gain, high efficiency, and high output power in the L, S band.
The NEC NE6501077 is an N-channel Gallium Arsenide (GaAs) MESFET designed for high gain, high efficiency, and high output power in L and S bands. The device features a Plated Heat Sink (PHS) structure to reduce thermal resistance and is housed in a hermetically sealed ceramic package suitable for Class A operation.
Key performance specifications include a typical output power of 39.5 dBm and a typical linear gain of 10.5 dB at 2.3 GHz. The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, and S-parameter data across a frequency range from 0.050 GHz to 4.000 GHz.
| Product Type | N-CHANNEL GaAs MES FET |
|---|---|
| Operating Bands | L, S band |
| Output Power (Typical) | 39.5 dBm |
| Linear Gain (Typical) | 10.5 dB |
| Power Added Efficiency (Typical) | 40 % |
The device provides a typical output power of 39.5 dBm.
The typical power added efficiency is 40 %.