NE662M16 is a NPN silicon high frequency transistor from NEC. It features high gain bandwidth (fT=25GHz), low noise figure (NF=1.1dB@2GHz), high maximum stable gain (20dB@f=2GHz) and low profile package (M16) with a height of just 0.50mm.
The NEC NE662M16 is an NPN silicon high frequency transistor fabricated using NEC's UHS0 25 GHz fT wafer process. It is designed for applications ranging from 100 MHz to over 10 GHz, offering excellent low voltage and low current performance. The device is packaged in a new low profile M16 flat lead style, making it ideal for portable wireless applications.
| Transition Frequency (fT) | 25 GHz |
|---|---|
| Noise Figure (NF) | 1.1 dB at 2 GHz |
| Maximum Stable Gain | 20 dB at 2 GHz |
| Collector to Base Voltage | 15 V |
| Collector Current | 35 mA |
| Total Power Dissipation | 115 mW |
| Package Type | M16 |
The typical transition frequency is 25 GHz.
The noise figure is 1.1 dB at 2 GHz.
The maximum collector current is 35 mA.