The NE664M04 is a NPN silicon high frequency power transistor from NEC. It features a high gain bandwidth, high output power and high linear gain, making it an excellent choice for the output or driver stage for mobile or fixed wireless applications.
The NEC NE664M04 is a medium power NPN silicon high frequency transistor fabricated using a 25 GHz fT wafer process. It is designed for use in applications ranging from 100 MHz to over 3 GHz, making it suitable for mobile and fixed wireless applications. The device provides an output power of 26 dBm at 1.8 GHz and features a low profile M04 package with a height of only 0.59 mm.
| Transition Frequency (fT) | 20 GHz |
|---|---|
| Output Power (P1dB) | 26 dBm at 1.8 GHz |
| Linear Gain (GL) | 12 dB at 1.8 GHz |
| Package Height | 0.59 mm |
| Collector Current (Ic) | 500 mA |
| Collector to Base Voltage (VcBo) | 13 V |
| Total Power Dissipation | 735 mW |