NE66719 is NEC's NPN silicon high frequency transistor, ideal for oscillator or low noise amplifier applications at 2 GHz and above. This device is fabricated using NEC's UHS0 25 GHz fT wafer process.
The NEC NE66719 is an NPN silicon high frequency transistor fabricated using NEC's UHS0 25 GHz fT wafer process. It is specifically designed for oscillator or low noise amplifier applications operating at 2 GHz and above. The device features a gain bandwidth of up to 21 GHz and a low noise figure of 1.1 dB at 2 GHz.
The document provides absolute maximum ratings, electrical characteristics, and typical performance curves. Key parameters include collector cutoff current, forward current gain, and noise figure. It also lists typical scattering parameters (S-parameters) and maximum available power gain across various frequencies and collector currents.
| Collector Cutoff Current (ICBO) | 100 nA |
|---|---|
| Forward Current Gain (hFE) | 50 to 100 |
| Gain Bandwidth (fT) | 18 to 21 GHz |
| Maximum Available Power Gain (MAG) | 12.5 dB |
| Noise Figure (NF) | 1.1 to 1.5 dB |
| Collector to Base Voltage (VCBO) | 15 V |
| Collector to Emitter Voltage (VCEO) | 3.3 V |
| Emitter to Base Voltage (VEBO) | 1.5 V |
| Collector Current (IC) | 35 mA |
| Total Power Dissipation | 115 mW |
| Junction Temperature (TJ) | 150 °C |
| Storage Temperature (TSTG) | -65 to +150 °C |
It is ideal for oscillator or low noise amplifier applications at 2 GHz and above.
The noise figure is 1.1 dB at 2 GHz with a collector current of 5 mA.
The gain bandwidth is 21 GHz at a collector current of 20 mA and 2 GHz frequency.
The maximum collector current rating is 35 mA.