The NE678M04 is a medium power NPN silicon high frequency transistor with features such as high gain bandwidth, high output power, and high linear gain. It is suitable for applications from 100 MHz to 3 GHz, making it an excellent choice for the driver stage in mobile or fixed wireless applications. The NE678M04 is fabricated using NEC's HFT3 wafer process and has a transition frequency of 12 GHz.
The NEC NE678M04 is a medium power NPN silicon high frequency transistor fabricated using NEC's HFT3 wafer process. It features a transition frequency (fT) of 12 GHz and is designed for applications ranging from 100 MHz to 3 GHz. The device provides an output power (P1dB) of 18 dBm at 1.8 GHz, making it suitable for driver stages in mobile or fixed wireless applications. It is housed in a new low profile/flat lead style M04 package with an SOT-343 footprint and a height of only 0.59 mm.
| Transition Frequency (fT) | 12 GHz |
|---|---|
| Output Power (P1dB) | 18 dBm |
| Linear Gain (GL) | 13 dB |
| Package Height | 0.59 mm |
| Collector to Base Voltage (VCBO) | 9.0 V |
| Collector Current (IC) | 100 mA |
| Total Power Dissipation (PT) | 205 mW |
| Junction Temperature (TJ) | 150 °C |
The absolute maximum collector to base voltage is 9.0 V.
The total power dissipation is 205 mW.
The device has a transition frequency of 12 GHz.