NE661M04 is an NPN silicon RF transistor produced by NEC, which has the characteristics of low noise, high gain and low current.
This document is a datasheet for the NEC NE661M04, an NPN silicon RF transistor designed for low current, low noise, and high-gain amplification. The device features a flat-lead 4-pin thin super mini-mold package and utilizes ft = 25 GHz technology. It is intended for applications requiring high performance at frequencies up to 10 GHz.
| Collector to Base Voltage | 15 V |
|---|---|
| Collector to Emitter Voltage | 3.3 V |
| Collector Current | 12 mA |
| Total Power Dissipation | 39 mW |
| Junction Temperature | 150 °C |
| Noise Figure | 1.2 dB TYP. |
| Maximum Stable Power Gain | 22 dB TYP. |
| Cut-off Frequency | 25 GHz |