Toshiba Manuals - Page 30

Toshiba manuals, page 30

• TOSHIBA TPCS8204 handbook

  This document describes the TPCS8204 TOSHIBA field effect transistor, which is suitable for lithium ion battery applications, notebook PC applications, and portable equipment applications. It features a small footprint and thin package, low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode.

• TOSHIBA TPCS8203 handbook

• TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8201 handbook

  TPCS8201 is a N-channel MOS transistor manufactured by Toshiba, which has the characteristics of miniaturization, low resistance, high gain, and can be used in lithium battery, portable equipment and other application scenarios

• TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 handbook

  The document describes the features and applications of the TPCS8104 model field effect transistor, including its use in notebook PCs and portable equipment. The transistor has small size, low drain-source resistance, high forward transfer admittance, and low leakage current.

• TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 handbook

  TPCS8102 is a field effect transistor produced by Toshiba. It features a small footprint and low power consumption. It is suitable for applications such as lithium ion batteries, portable devices and notebooks.

• TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 handbook

  TPCS8101 is a low-power field effect transistor from TOSHIBA. It is suitable for portable equipment applications such as notebook PCs. This tube has small package, low leakage current, high on resistance and other characteristics.

• TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TPCS8004 handbook

• TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 handbook

• TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type Field Effect Transistor Silicon N Channel MOS Type TPCP8H01 handbook

  This document describes the features and characteristics of the TPCP8H01 model, including multi-chip discrete devices, built-in NPN transistors, and N-channel MOS field-effect transistors. The product features high DC current gain, low collector-emitter saturation voltage, and high-speed switching.

• TOSHIBA Field Effect Transistor Silicon P N Channel MOS Type (U-MOS IV U-MOS III) TPCP8402 handbook

  TPCP8402 is a MOSFET device manufactured by Toshiba. It has low leakage current, low ON resistance and high input impedance.

• TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 handbook

  This document provides parameter information for TPCF8102, including rated voltage, maximum current, etc.

• TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) TPC8403 handbook

  This document describes the features and characteristics of TPC8403, a TOSHIBA field effect transistor, including low drain-source ON resistance, high forward transfer admittance, low leakage current, and enhancement mode. It is suitable for motor drive applications, notebook PC applications, and portable equipment applications.

• TOSHIBA TPC8401 Manual

  The TPC8401 is a MOSFET produced by Toshiba. It features low leakage current, high on-resistance and high gain. It is suitable for lithium ion batteries in portable devices such as notebooks.

• TOSHIBA Field Effect Transistor Silicon N P Channel MOS Type (π MOSVI/U MOSII) TPC8402 handbook

  TPC8402 is a N, P channel MOS type field effect transistor produced by Toshiba Corporation. It is used in lithium ion secondary batteries, notebooks and portable equipment. Its features are low on-resistance, high transfer gain and low leakage current.

• TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U MOSII) TPC8305 handbook

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