The document introduces three models of OptiMOS®2 power transistors: IPB03N03LA, IPI03N03LA, and IPP03N03LA. These transistors are ideal for high-frequency dc/dc converters and have excellent gate charge and on-resistance, as well as superior thermal resistance. They have an operating temperature of 175°C and are rated for reverse diode dv/dt. The document also provides parameter and package information for each model.
BC817 and BC818 are NPN silicon AF transistors, suitable for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. There are also complementary types BC807 and BC808 (PNP).
BC817UPN is a NPN/PNP Silicon Transistor Array, for AF input stages and driver applications, with high current gain, low collector-emitter saturation voltage, and two (galvanic) internal isolated NPN/PNP Transistors in one package.
BC817U is a NPN silicon transistor array designed for AF input stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and two internally isolated transistors with good matching in one package.
BC817W, BC818W are NPN silicon AF transistors for general AF applications. They have high collector current, high current gain, and low collector-emitter saturation voltage. The complementary types are BC807W, BC808W (PNP).
BC807W, BC808W are Infineon PNP silicon AF transistors, used for general AF applications, with high collector current, high current gain, low collector-emitter saturation voltage.
BC807U is a PNP Silicon Transistor Array for AF input stages and driver applications with high current gain, low collector-emitter saturation voltage and two (galvanic) internal isolated Transistors with good matching in one package
This document describes the features and characteristics of the BCV62 PNP Silicon Double Transistor. It can be used as a current mirror and has good thermal coupling and VBE matching, high current gain, and low collector-emitter saturation voltage.
BCV61 is an NPN Silicon Double Transistor, To be used as a current mirror, with Good thermal coupling and VBE matching, High current gain and Low collector-emitter saturation voltage.
BCV28 and BCV48 are PNP silicon Darlington transistors designed for general AF applications. They have high collector current and high current gain. Complementary types BCV29 and BCV49 (NPN) are also available.
BCW67 and BCW68 are PNP silicon AF transistors for general AF applications. They have high current gain and low collector-emitter saturation voltage. The complementary types are BCW65 and BCW66 (NPN).
BCW 67 BCW 68 are bipolar junction transistors with high current gain and low collector-emitter saturation voltage. They are suitable for general audio applications.
This document describes the features and characteristics of BCW65 and BCW66, including their applications in general AF, high current gain, low collector-emitter saturation voltage, etc. It also provides information about complementary types BCW67 and BCW68.
