INFINEON Manuals

BCW61A is a type of silicon PNP transistor in the BCW61 series. This series of transistors has the characteristics of high current gain, low collector-emitter saturation voltage and low noise, and can be used in audio input stages and driver applications.

BAT165 is a medium current Schottky rectifier diode for low-loss, fast-recovery, meter protection, bias isolation and clamping applications. It has a miniature plastic package for surface mounting (SMD).

The document describes the features and characteristics of BAT 68W silicon Schottky diodes, which are mainly used for mixer applications in the VHF / UHF range and high-speed switching applications.

BAT 68-08S is a silicon Schottky diode array designed for mixer applications in the VHF / UHF range and high-speed switching applications. It has a breakdown voltage of 8V, a maximum forward current of 130mA, a maximum junction temperature of 150℃, and a forward resistance of 10Ω.

This document describes the features and characteristics of the BAT 68 series silicon Schottky diodes, which are mainly used for mixer applications in the VHF / UHF range and high-speed switching applications.

BAT 66-05 is a Schottky diode from BAT company. Its maximum reverse voltage is 40 V, maximum forward current is 2 A, and maximum power dissipation is 1.2 W. BAT 66-05 is packaged in SOT-223 and can be used for low-loss, fast-recovery rectification, meter protection, bias isolation, and clamping.

BAT 64-07 is a Schottky diode from BAT company. It has the characteristics of low loss, fast recovery, meter protection, bias isolation and clamping applications. Its reverse voltage is 40V, the average forward current is 120mA, the surge forward current is 800mA, the total power dissipation is 250mW, the junction temperature is 150°C, and the storage temperature is -55~150°C.

The BAT 64 series are a range of silicon Schottky diodes for low-loss, fast-recovery, meter protection, bias isolation and clamping applications. These diodes feature integrated diffused guard rings and low forward voltages.

BAT 63-07W is a silicon Schottky diode with a maximum reverse voltage of 3 V and a maximum forward current of 100 mA. This diode is suitable for high-frequency detection applications and high-speed switching applications.

This document describes a low barrier diode for detectors up to GHz frequencies. The product has a reverse voltage of 40V and a forward current of 2mA. Additionally, the document provides information on the pin configuration and package of the device.

This document describes the features and characteristics of the BAT 62-07W silicon Schottky diode, including its low barrier diode for detectors up to GHz frequencies, maximum ratings such as reverse voltage and junction temperature, and electrical characteristics such as reverse current and forward voltage.

BAT 62-03W is a low power Schottky diode with a working voltage of up to 40V and a maximum current of 40mA. The package type is SOD-323.

BAT 62-02W is a low power diode for detectors up to GHz frequencies.

BAT 62 is a low barrier diode for detectors up to GHz frequencies.

The BAT 60A is a silicon Schottky diode with an extremely low VF drop. It is suitable for power supplies, low voltage applications for clamping and protection, as well as detection and step-up conversion.