INFINEON Manuals

IPW60R045CP CoolMOS® Power Transistor Features: Worldwide best R ds,on in TO247, Ultra low gate charge, Extreme dv/dt rated, High peak current capability, Qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant. CoolMOS CP is specially designed for: Hard switching SMPS topologies.

IPB60R299CP CoolMOSTM power transistor features the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant. CoolMOS CP is designed for hard switching SMPS topologies.

IKP01N120H2 is a high-speed power semiconductor product with a soft, fast recovery anti-parallel EmCon HE diode. It is designed for applications such as switch-mode power supplies, lamp ballasts, and zero-voltage switching converters in soft-switching/resonant topologies. The product features second-generation HighSpeed-Technology for 1200V applications, offering loss reduction in resonant circuits, temperature stable behavior, parallel switching capability, tight parameter distribution, and optimized Eoff for IC=1A.

IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode is a new type of Schottky diode produced by IDT. It has no reverse recovery/no forward recovery, high surge current capability, lead-free welding and other features. It is suitable for CCM PFC, motor drive and other fast switching applications.

This is a datasheet of a MOSFET product of Fairchild semiconductor. It details the parameters of the product.

SPN02N60C3 CoolMOSTM Power Transistor features new revolutionary high voltage technology, ultra low gate charge, ultra low effective capacitances and extreme dv/dt rating.

This is an 8-bit single-chip microcontroller from Infineon Technologies AG, model number XC886/888CLM.

The IPP90R1K0C3 CoolMOS™ Power Transistor has the lowest figure-of-merit RON x Qg, extreme dv/dt ratings, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant, ultra low gate charge. CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS.

The SPA15N60CFD is a power transistor produced by STMicroelectronics. It has an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, and has been qualified according to JEDEC1) for target applications. It is designed for softswitching PWM stages and LCD and CRT TVs.

IPP60R199CP CoolMOSTM power transistors feature the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, and are qualified according to JEDEC1) for target applications. They have Pb-free lead plating and are RoHS compliant. CoolMOS CP is specially designed for hard switching topologies in server and telecom applications.

The SPW47N60CFD is a CoolMOSTM power transistor with new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating, qualified according to JEDEC1) for target applications, lead-free lead plating; RoHS compliant.

This datasheet provides the technical specifications of the BUP 213 IGBT, including maximum ratings, dynamic characteristics, and static characteristics.

IKW15T120 is a high power IGBT module from Infineon, using NPT technology, with low EMI, low gate charge, low loss, short circuit withstand time of 10 microseconds, very soft, fast recovery anti-parallel EmCon HE diode, etc., suitable for frequency converters and uninterruptible power supplies.

BSP135 SIPMOS® is a N-channel, depletion mode, dv/dt rated small-signal transistor with a maximum rating of T j=25°C, unless otherwise specified.

This document introduces the characteristics and parameters of Panasonic 1200V 600A IGBT.