INFINEON Manuals

SPA06N60C3 CoolMOSTM Power Transistor features: New revolutionary high voltage technology, Ultra low gate charge, Periodic avalanche rated, High peak current capability, Ultra low effective capacitances, Extreme dv /dt rated, Improved transconductance, Fully isolated package (2500 V AC; 1 minute)

The BSS138N is a N-channel enhancement mode logic level small signal MOSFET manufactured by Infineon.

This document describes the parameters such as VDS, Tjmax, and the features and characteristics of the product.

The IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G OptiMOS®2 Power-Transistor features the following: N-channel, normal level; Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); 175 °C operating temperature; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC1) for target application; Ideal for high-frequency switching and synchronous rectification.

This document describes the features and characteristics of the BFP405 NPN Silicon RF Transistor, which is suitable for low current applications and oscillators up to 12 GHz. It has a noise figure of 1.25 dB at 1.8 GHz and an outstanding gain of 23 dB at the same frequency. The transistor has a transition frequency of 25 GHz and utilizes gold metallization for high reliability.

16-Bit Single-Chip Microcontroller

The BSO119N03S is an N-channel logic level MOSFET with fast switching, excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), superior thermal resistance, avalanche rating, lead-free plating and RoHS compliance.

This document describes the features and characteristics of the SPN03N60C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, extreme dv/dt rating, ultra low effective capacitances.

BFR360F is an NPN silicon RF transistor in the BFR series. It is suitable for low-noise amplifiers and oscillators below 3.5 GHz.

IPB60R600CP is a model of the IPB60 series. It is a power transistor produced by ON Semiconductor. Its features are the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, JEDEC1) qualified, lead plating, and RoHS compliant.

TDA 5220 ASK/FSK Single Conversion Receiver is a wireless control component.

This document describes the features and characteristics of SPP16N50C3, SPI16N50C3, and SPA16N50C3 Cool MOS™ power transistors, including new high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, improved transconductance, and different package types.

SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS™ Power Transistors feature 560 V VDS@Tjmax, 0.6 Ω RDS(on) and 7.6 A ID. Its features include: New revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.

XC164KM 16-Bit Single-Chip Microcontroller with C166SV2 Core