INFINEON Manuals

The BSP317P SIPMOS is a logic-level N-channel enhancement mode MOSFET from Texas Instruments with a maximum VDS of -250V and a maximum Ptot of 1.8W, with an operating temperature of -55-150℃.

BSP 315 P SIPMOS Small-Signal-Transistor is a P-Channel, Enhancement mode, Avalanche rated, Logic Level, dv/dt rated electronic component.

BSC022N03S OptiMOS®2 Power Transistor is a fast switching MOSFET for SMPS optimized for notebook DC/DC converters. It is qualified according to JEDEC1 for target applications. It features N-channel, logic level, very low on-resistance R DS(on), excellent gate charge x R DS(on) product (FOM), superior thermal resistance, avalanche rated, dv/dt rated.

SPD02N60C3/SPU02N60C3 is a high voltage power transistor of Cool MOS™ series, with features such as ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and 150°C operating temperature

The SPP07N60CFD CoolMOSTM power transistor features an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for soft switching PWM stages, LCD, and CRT TV applications.

BAT64 series is a low loss, fast recovery, silicon Schottky diodes for meter protection, bias isolation and clamping application with integrated diffused guard ring and low forward voltage

This document is a datasheet for Infineon Technologies AG's 8-bit XC878CLM single-chip microcontroller. The document describes the features and characteristics of this microcontroller.

This document describes the CoolSET™-F3 series of power management and supply products, including multiple models of ICE3A(B)0365/0565/1065/1565, ICE3A(B)2065/2565, ICE3A0565Z/2065Z, ICE3A(B)2065I/3065I/3565I, ICE3A(B)5065I/5565I, ICE3A(B)2065P/3065P/3565P, and ICE3A(B)5065P/5565P. These products are off-line SMPS current mode controllers with integrated 650V startup cell/depletion CoolMOS™.

SPP11N60CFD is a high voltage power transistor with new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge

IPA50R520CP is a CoolMOSTM power transistor with the lowest RON x Qg figure of merit, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance.

SPP15N65C3 CoolMOS power transistor features include low gate charge, extreme dv/dt rating, and high peak current capability. The product is qualified according to JEDEC1) for target applications, and meets lead-free lead plating and RoHS requirements. CoolMOS C3 is designed for notebook adapter.

BFR183W is an NPN silicon RF transistor, which is suitable for low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA.

SPW11N60S5 is a Cool MOS™ power transistor, featuring new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.