The TLE 4240 G is a monolithic integrated low-drop LED Driver in the very small SMD package SCT 595. It is designed to supply LEDs under the severe conditions of automotive applications. The output is a constant current source which drives LEDs to 60 mA within an accuracy of ± 20%.
BSS670S2L is a N-channel enhancement mode logic level MOSFET produced by ON Semiconductor. Its maximum voltage is 55V, the minimum on-resistance is 650mΩ, and the maximum current is 0.54A.
SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor features 650 V VDS and 0.19 Ohm RDS(on), the lowest RDS(on) in TO-220 worldwide. It also has ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability and improved transconductance.
This PDF file is the datasheet of SPP20N60S5 Cool MOS™ Power Transistor. The product has the following features: new revolutionary high voltage technology, world's best RDS(on) in TO 220, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
SPW20N60S5 is a high voltage MOSFET with a maximum voltage of 600V and a maximum current of 20A. It has ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances and improved transconductance.
IKA10N60T is an IGBT from Infineon with a very low Vce(sat) of 1.5V, a maximum junction temperature of 175°C and a short circuit withstand time of -5µs. This product is suitable for applications such as washing machines, air conditioners, inverters and variable speed drives.
This document describes the features and characteristics of the BSO4420 OptiMOS small-signal transistor, including N-channel, logic level, very low on-resistance RDS(on), excellent gate charge x RDS(on) product (FOM), avalanche and dv/dt rating. The transistor is ideal for fast switching applications.
IPP60R125CP CoolMOSTM Power Transistor is a low RONxQg power transistor that offers ultra low gate charge, extreme dv/dt rating and high peak current capability. The device is qualified according to JEDEC1) standard for target applications, such as server and telecom.
This document describes the features and characteristics of the power transistors SPD18P06P and SPU18P06P, including P-Channel, enhancement mode, avalanche rated, dv/dt rated, and operating temperature.
The ISP752R is a high-performance high-side switch from STMicroelectronics. It is suitable for industrial applications and offers overvoltage protection, overload protection, short circuit protection, thermal shutdown protection, ESD protection, overtemperature protection, and more.
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 is a high voltage large power MOS transistor with ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability and improved transconductance.
This document provides technical parameters for 2N7000N-3-11 transistor, including maximum current, maximum power dissipation, drain voltage, static gate source voltage, gate voltage, etc.
IPW60R199CP CoolMOSTM Power Transistor is a power transistor produced by Infineon. It has the lowest RONxQg, ultra-low gate charge, extreme dv/dt rating, high peak current capability. It meets JEDEC standards and is suitable for server and telecom applications.
