INFINEON Manuals

This document describes the features and characteristics of the SPP11N65C3, SPA11N65C3, and SPI11N65C3 Cool MOS™ power transistors, including new high voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, and improved transconductance.

The document describes the features and characteristics of the 2005-09-29 BFP193W 1 NPN Silicon RF Transistor, which is suitable for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It has an fT of 8 GHz and a gain of 1 dB at 900 MHz.

This document describes the features and characteristics of the BSP89 SIPMOS small-signal transistor, including maximum voltage, drain current, power dissipation, operating temperature, etc.

IPD60R385CP CoolMOS® Power Transistor is the worldwide best R ds,on in TO252, ultra low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant.

The PROFET® ITS621L1 is a smart two-channel high side power switch from Infineon. The product features overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump), fast demagnetization of inductive loads, reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in ON-state, CMOS compatible input, loss of ground and loss of Vbb protection, and electrostatic discharge (ESD) protection. It is suitable for 12 V and 24 V DC grounded loads in industrial applications and can replace electromechanical relays, fuses, and discrete circuits.

IKP03N120H2 and IKW03N120H2 are Infineon's high performance power semiconductors, which are suitable for applications such as SMPS, Lamp Ballast, ZVS-Converter. These products have stable temperature characteristics and have passed JEDEC2 certification.

This is a datasheet for Infineon C165 16-bit single-chip microcontroller

IPP90R800C3 CoolMOS™ Power Transistor is a power transistor launched by Infineon. The product has the lowest RON x Qg, extreme dv/dt, high peak current capability and other features. It is suitable for various switch power supply applications.

BDP947, BDP949 are two silicon NPN transistors with high collector current, high current gain and low collector-emitter saturation voltage.

The BSM 200 GB 120 DN2 is an IGBT module produced by Bosch. Its maximum ratings are Vce of 1200V and IC of 290A.

IKA15N60T is a 600V IGBT with soft recovery anti-parallel EmCon HE diode, max. junction temperature is 175 °C, and short circuit withstand time is -5µs.

IPW50R350CP is a power transistor that has the latest technology, the lowest RON x Qg, the ultra-low gate charge, extreme dv/dt and other characteristics. This product is suitable for hard switching and soft switching SMPS topologies, CCM PFC for Lamp Ballast, LCD and PDP TV and PWM for Lamp Ballast, LCD and PDP TV.

This document is about TC1161/TC1162 32-Bit Single-Chip Microcontroller TriCoreTM

IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode is a high-performance Schottky diode produced by IDT company. It features benchmark switching behavior, no reverse recovery/no forward recovery, no temperature influence on switching behavior, high surge current capability and so on.

IKP04N60T is a power semiconductor product launched by Infineon. It uses TrenchStop® and Fieldstop technology and has the characteristics of low VCE(sat), high reliability and high switching speed.