INFINEON Manuals

The SKW25N120 is a fast IGBT from Infineon that uses NPT technology and has a soft, fast-recovery anti-parallel EmCon diode. It can operate between -55 and 150 degrees Celsius, has a short circuit withstand time of 10 microseconds, and can handle a maximum current of 25 amps and a maximum voltage of 1200 volts.

PROFET® ITS 724G is a high-end smart power switch launched by Infineon, which is suitable for industrial applications. This switch adopts 4-channel design, each channel has a resistance of 90mΩ, and the maximum load current is 12A. The product adopts CMOS compatible input, and has diagnostic feedback function, which can realize short circuit protection, overload protection, current limitation, thermal shutdown, overvoltage protection, reverse battery protection, loss of ground and loss of Vbb protection.

This datasheet provides the parameter information of SPP21N50C3, SPI21N50C3, SPA21N50C3, including maximum voltage, current, power, temperature, etc.

This document describes the features and characteristics of the BSP 300 SIPMOS® small-signal transistor, released in 2005. It includes N channel, enhancement mode, avalanche rating, VGS(th) of 2.0-4.0V, etc. The document also provides maximum ratings, thermal resistance, and static characteristics.

BAT165 is a medium power AF Schottky diode manufactured by ON Semiconductor. It has a forward current of 750 mA and a reverse voltage of 40 V. It is suitable for low-loss, fast-recovery, meter protection, bias isolation and clamping applications.

SKP10N60A is an IGBT module from Infineon with a 600V rating and a maximum output current of 10A. It has a low switching loss and a rated junction temperature of 150°C. The product is manufactured using NPT-technology and is highly reliable. It is also equipped with a reverse-parallel EmCon diode for fast recovery. SKP10N60A is suitable for various motor control and inverter applications.

The BSC042N03S OptiMOS®2 power transistor has fast switching, excellent current conduction, low on-resistance, excellent thermal resistance, and good dv/dt characteristics, which are suitable for notebook DC/DC converters and other applications.

This datasheet mainly introduces the features and characteristics of IPD20N03L and IPU20N03L, including product model, package, maximum ratings, electrical characteristics, etc.

IKA03N120H2 is a power semiconductor device produced by Infineon. This device uses the second-generation HighSpeed technology and has a soft recovery, fast recovery anti-parallel EmCon HE diode. It is suitable for television horizontal line deflection.

IPD50R399CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, and RoHS compliance. It is designed for hard and softswitching SMPS topologies, DCM PFC for lamp ballast, and PWM for lamp ballast and PDP/LCD TVs.

This document is about FS50R12KE3 IGBT-Modules technical information, it includes various characteristics parameters of this product.

BUP 313D IGBT is an IGBT with an integrated diode, with low forward voltage drop, high switching speed, low tail current, latch-up free and high reliability.