Philips manuals, page 43
PHILIPS BLF2022-125 UHF power LDMOS transistor handbook
BLF2022-125 is a power transistor produced by Philips. It uses the SOT634A package and is mainly used in W-CDMA base stations and multi-carrier applications in the 2000 to 2200MHz frequency range. It has the characteristics of easy power control, ruggedness, high power gain, excellent thermal stability, etc.
PHILIPS BLF2022-120 UHF push-pull power LDMOS transistor handbook
BLF2022-120 is a high power gain LDMOS transistor from Philips Semiconductors. It is designed for broadband operation (HF to 2.2 GHz).
PHILIPS BLF202 HF/VHF power MOS transistor handbook
BLF202 is a HF/VHF power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, gold metallization, good thermal stability and full load mismatch capability. It is suitable for communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5V.
PHILIPS BLF1822-10 UHF power LDMOS transistor handbook
BLF1822-10 is a UHF power LDMOS transistor with the following features: output power of 10W, gain of 18.5dB at 900MHz, 13.5dB at 2200MHz, efficiency of 39% at 900MHz, 34% at 2200MHz, dim of -31dBc at 900MHz, -28dBc at 2200MHz, etc.
PHILIPS BLF1820-90 UHF power LDMOS transistor handbook
This document describes the features and characteristics of the BLF1820-90 UHF power LDMOS transistor, including output power, gain, efficiency, suppression, etc. It is suitable for GSM, EDGE, CDMA base stations, and multicarrier applications.
PHILIPS BLF1820-70 UHF power LDMOS transistor handbook
BLF1820-70 is a 70W LDMOS power transistor from Philips, designed for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.
PHILIPS BLF177 HF/VHF power MOS transistor handbook
BLF177 is a high power MOS transistor produced by Philips Semiconductors. It has high power gain, low intermodulation distortion, easy power control, good thermal stability and full load matching characteristics.
PHILIPS BLF175 HF/VHF power MOS transistor handbook
BLF175 is a power MOS transistor produced by Philips Corporation. It has the characteristics of high power gain, low intermodulation distortion, easy power control, good thermal stability, etc.
PHILIPS BLF147 VHF power MOS transistor handbook
The BLF147 VHF power MOS transistor is a silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.
PHILIPS BLF145 HF power MOS transistor handbook
PHILIPS BLF1049 Base station LDMOS transistor handbook
BLF1049 is a LDMOS power transistor manufactured by Philips Semiconductors. It is used in GSM, EDGE and CDMA base stations and multi-carrier applications in the 800 to 1000 MHz frequency range. It has a maximum output power of 125W, a gain of 16.5dB, an efficiency of 54% and good anti-interference performance.
PHILIPS BLF1048 UHF power LDMOS transistor handbook
The BLF1048 is a UHF power LDMOS transistor with high power gain, easy power control, and excellent ruggedness. It is designed for communication transmitter applications in the UHF frequency range.
PHILIPS BLF1047 UHF power LDMOS transistor handbook
BLF1047 is a UHF power LDMOS transistor produced by Philips Semiconductors. It has the characteristics of high power gain, easy power control, excellent ruggedness, and is designed for broadband operation (HF to 1 GHz). It is suitable for communication transmitter applications in the UHF frequency range.
PHILIPS BLF1046 UHF power LDMOS transistor handbook
PHILIPS BLF1043 UHF power LDMOS transistor handbook
BLF1043 UHF power LDMOS transistor is a high power gain, easy power control, rugged and durable transistor, designed for broadband operation (HF to 1 GHz).