Philips manuals, page 42
PHILIPS BLF246B handbook
BLF246B is a VHF push-pull power MOS transistor with high power gain, easy power control, good thermal stability, and excellent reliability. It is suitable for large signal applications in the VHF frequency range.
PHILIPS BLF246 handbook
The BLF246 is a power MOS transistor developed by Philips. It has high power gain, low noise figure, easy power control, good thermal stability and full load mismatch capability. It is applied to large signal amplifier applications in the VHF frequency range.
PHILIPS BLF245B handbook
BLF245B is a VHF push-pull power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, good thermal stability and excellent reliability.
PHILIPS BLF245 handbook
BLF245 is a VHF power MOS transistor with high power gain, low noise figure, easy power control, good thermal stability, and withstands full load mismatch.
PHILIPS BLF244 handbook
The BLF244 is a VHF power MOS transistor with high power gain, low noise figure, easy power control, good thermal stability, and the ability to withstand full load mismatch. It is designed as a silicon N-channel enhancement mode vertical D-MOS transistor for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. This product contains beryllium oxide and requires proper handling for safety.
PHILIPS BLF2048 handbook
BLF2048 is a UHF push-pull power LDMOS transistor with high power gain, easy power control, and excellent ruggedness. It is designed for broadband operation (HF to 2.2 GHz). It is mainly used for common source class-AB operation in PCN and PCS applications in the 1800 to 2200 MHz frequency range.
PHILIPS BLF225 handbook
BLF225 is a VHF power MOS transistor produced by Philips company. It features easy power control, good thermal stability and withstands full load mismatch.
PHILIPS BLF242 handbook
BLF242 is a HF/VHF power MOS transistor produced by Philips Semiconductors. It has the characteristics of high power gain, low noise, easy power control, good thermal stability, etc.
PHILIPS BLF2047L/90 handbook
BLF2047L/90 is a high power gain, high efficiency, low power consumption UHF power LDMOS transistor produced by Philips Semiconductors. It is mainly used in PCN and PCS applications in the 1800 to 2000MHz frequency range.
PHILIPS BLF2047 handbook
BLF2047 is a high power gain LDMOS transistor, featuring easy power control, excellent ruggedness, underside source eliminates DC isolators, reducing common mode inductance, designed for broadband operation (1.8 to 2.2 GHz). Internal input and output matching for high gain and efficiency.
PHILIPS BLF2045 handbook
This is a high power gain LDMOS transistor with good ruggedness, designed for broadband operation and suitable for communication transmitter applications in the 1.8 to 2.2 GHz frequency range.
PHILIPS BLF2043 UHF power LDMOS transistor handbook
BLF2043 is a high power LDMOS transistor produced by Philips. It has high power gain, easy power control, excellent ruggedness, source connected to the mounting base, eliminates DC isolators, reduces common mode inductance, and is designed for broadband operation (HF to 2.2 GHz).
PHILIPS BLF2022-90 UHF power LDMOS transistor handbook
The BLF2022-90 is a 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. It features easy power control, excellent ruggedness, high power gain, excellent thermal stability and internal matching for ease of use.
PHILIPS BLF2022-70 UHF power LDMOS transistor handbook
BLF2022-70 is a 70 W LDMOS power transistor produced by Philips Corporation. It is suitable for W-CDMA base stations and multi-carrier applications in the 2000 to 2200 MHz frequency range.
PHILIPS BLF2022-30 UHF power LDMOS transistor handbook
BLF2022-30 is a 30 W LDMOS power transistor from Philips Semiconductors, designed for broadband operation (2000 to 2200 MHz) and used in RF power amplifiers for W-CDMA base stations and multicarrier applications.