Panasonic manuals, page 317
Panasonic 2SA0777 (2SA777) handbook
2SA0777 is a silicon PNP type transistor manufactured by Mitsubishi Electric. It features high collector-emitter voltage (base open) VCEO and is optimized for the driver stage of a low-frequency and 25 W to 30 W output amplifier.
Panasonic 2SA0720A(2SA720A) Manual
This document describes the features of the 2SA0720A (2SA720A) silicon PNP epitaxial planar transistor, which is suitable for the driver stage of a low-frequency amplifier. The transistor has a high collector-emitter voltage and is optimal for the driver stage of a low-frequency and 25W to 30W output amplifier.
Panasonic 2SA0719/2SA0720(2SA719/2SA720) Manual
2SA0719, 2SA0720 are NPN type low frequency power amplifier and driver amplifier produced by Mitsubishi Electric, Japan. Their package type is TO-92 and they are complementary pairs with 2SC1317, 2SC1318
Panasonic 2SA0683 (2SA683) 2SA0684 (2SA684) Manual
This document describes the features and characteristics of 2SA0683 and 2SA0684, which are silicon PNP epitaxial planar transistors suitable for low-frequency power amplification and driver amplification. They are complementary to 2SC1383 and 2SC1384.
Panasonic 2SK123 Silicon N-Channel Junction FET Manual
2SK123 is an N-channel junction FET produced by Toshiba Corporation. It is mainly used for low-frequency impedance conversion and capacitor microphone
Panasonic 2SK1228 Silicon N-Channel MOS FET Manual
This document describes the features and characteristics of a Silicon MOS FETs (Small Signal) product, including high-speed switching, wide frequency band, and built-in gate protection-diode.
Panasonic 2SK1104 handbook
2SK1104 is a N-channel junction field-effect transistor produced by Toshiba. It has low on-resistance and low-noise characteristics
Panasonic 2SK1103 Silicon N-Channel Junction FET Manual
2SK1103 is a N-channel silicon junction field effect transistor manufactured by Toshiba Corporation. Its features are low on-resistance and low noise characteristics.
Panasonic 2SK0665 (2SK665) handbook
2SK0665(2SK665) is a high performance small signal N-channel MOSFET produced by Fujistu. It features high switching speed, high input impedance and high electrostatic breakdown voltage. This datasheet provides detailed information on the characteristics of this device, for reference by design engineers.
Panasonic 2SK0664 (2SK664) handbook
The 2SK0664 (2SK664) is a high performance silicon N-channel MOSFET for switching applications. This device features high switching speed and S-mini type package for downsizing of the sets and automatic insertion through the tape/magazine packing.
Panasonic 2SK0662 (2SK662) handbook
2SK0662 is a N-channel silicon junction field effect transistor produced by Toshiba. It is mainly used for low-frequency amplification and has the characteristics of high mutual conductance and low noise.
Panasonic 2SK0657 (2SK657) handbook
This document describes the features and characteristics of the 2SK0657 (2SK657) Silicon N-Channel MOS FET, including high-speed switching and easy installation and fixing.
Panasonic 2SK0656(2SK656) handbook
2SK0656 (2SK656) is a N-channel MOSFET transistor produced by Toshiba. Its features are high switching speed, low drive current and high electrostatic breakdown voltage.
Panasonic 2SK0620 (2SK620) handbook
This document describes the features and characteristics of the 2SK0620 (2SK620) Silicon N-Channel MOS FET, including high-speed switching and mini-type package.
Panasonic 2SK0615 (2SK615) handbook
The 2SK0615(2SK615) is a low voltage small signal MOSFET from Toshiba Semiconductor. It features a low ON-resistance, high-speed switching, can be driven directly by CMOS and TTL, and is available in an M-type package.