2SJ163 is a silicon P-channel junction field effect transistor for general switching with low on-resistance and low noise characteristics.
The document describes the Panasonic 2SJ163, a Silicon P-Channel Junction Field Effect Transistor (FET) designed for general switching applications. It is noted as being complementary to the 2SK1103 model and is available in TO-236 or SC-59 packages.
Key features highlighted include low ON-resistance and low-noise characteristics. The datasheet details absolute maximum ratings such as a gate-to-drain voltage of 65V, a drain current of -20mA, and an allowable power dissipation of 150mW at 25°C.
The absolute maximum rating for allowable power dissipation is 150 mW.