2SK0655 is a N-channel MOSFET with high switching speed and support radial lead-out.
This document is a technical datasheet for the Panasonic 2SK0655 (also known as 2SK655), which is a Silicon N-Channel MOS FET designed for small signal applications. The device features high-speed switching capabilities and is available in an NS-BI package.
The datasheet provides absolute maximum ratings, such as a drain to source voltage of 50V and a gate threshold voltage range of 1.5V to 3.5V. It also lists electrical characteristics including input capacitance, output capacitance, turn-on time (10 ns), and turn-off time (20 ns) under specific test conditions.
| Drain to Source voltage (Vds) | 50 V |
|---|---|
| Gate to Source voltage (Vgs) | 8 V |
| Drain current (Id) | 100 mA |
| Max drain current (Ipp) | 200 mA |
| Allowable power dissipation (Pd) | 200 mW |
| Channel temperature (Tch) | 150 °C |
| Storage temperature (Ts) | -55 to +150 °C |
| Gate threshold voltage (Vth) | 1.5 to 3.5 V |
The device uses an NS-BI Package.
Yes, the conventional part number is 2SK655.
Electrical characteristics are specified at an ambient temperature (Ta) of 25°C.