This document describes the features and characteristics of the 2SJ164 Silicon P-Channel Junction FET, which includes low ON-resistance and low-noise characteristics.
This document is a technical datasheet for the Panasonic 2SJ164, a small signal Silicon P-Channel Junction Field Effect Transistor (FET). The device is designed primarily for switching applications and features low ON-resistance and low-noise characteristics. It is noted as being complementary to the 2SK1104 model.
The datasheet provides comprehensive electrical specifications including absolute maximum ratings such as a gate-to-drain voltage of 65V and an allowable power dissipation of 300mW. It also lists typical electrical parameters like drain-to-source cut-off current, forward transfer admittance, and various capacitance values under standard test conditions.
| Device Type | Silicon P-Channel Junction FET |
|---|---|
| Application | For switching |
| Complementary Device | 2SK1104 |
| Gate to Drain Voltage (Vops) | 65 V |
| Drain Current (Ip) | 20 mA |
| Gate Current (Ig) | -10 mA |
| Allowable Power Dissipation (Pp) | 300 mW |
| Channel Temperature (Toh) | 150 °C |
| Storage Temperature (Tog) | -55 to +150 °C |
The absolute maximum rating for Gate to Drain voltage (Vops) is 65 V.
Yes, the document explicitly states that this device is 'For switching'.