2SJ0164 is a silicon P-channel junction field effect transistor from Toshiba with low on-resistance and low noise characteristics.
This document provides technical specifications for the Panasonic 2SJ0164 (also known as 2SJ164), a Silicon P-Channel Junction Field Effect Transistor designed for switching applications. It is noted as being complementary to the 2SK1104 model.
The datasheet lists absolute maximum ratings, including a gate-to-drain voltage of 65V and an allowable power dissipation of 300mW at 25°C. Key electrical characteristics such as input capacitance (10 pF) and output capacitance (3 pF) are provided for common source configurations.
| Device Type | Silicon P-Channel Junction FET |
|---|---|
| Application | For switching |
| Complementary Part | 2SK1104 |
The maximum allowable power dissipation is 300 mW.
The maximum channel temperature is 150 °C.