2SK3193 is a N-channel power MOSFET produced by Mitsubishi Electric. It is mainly used in switching circuits. This device has the characteristics of high avalanche energy capability, high switching speed, low on resistance and no secondary breakdown.
This document is a technical specification sheet for the Panasonic 2SK3193, an N-channel silicon power MOSFET designed for switching applications. It features low ON resistance and high-speed switching capabilities.
The datasheet provides comprehensive absolute maximum ratings, electrical characteristics at 25°C, and thermal parameters. It also includes a safe operating area graph and standard legal disclaimers regarding export controls and liability.
| Avalanche energy capability | 200 mJ |
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The device comes in SC-92 and TOP-3F-B1 packages.
It is intended for office equipment, communications equipment, measuring instruments, and household appliances.
Yes, the document states that the product complies with the RoHS Directive (EU 2002/9S/EC).