This application notes aims to outline the characteristics of a new power device that joins the peculiarities of an STMicroelectronics fast-switching PowerMESH™ IGBT with some novel protection features. A driver circuit is integrated in the power device to implement over-current protection and soft thermal shutdown. The current limitation also ensures a highly short-circuit rated device. Moreover the low threshold voltage and input current make it possible to drive the device directly from the output pin of a microprocessor. The static and dynamic behavior of the device will be illustrated and an application will be suggested.
The document introduces a new full-protected STMicroelectronics Smart IGBT that integrates over-current and soft thermal shutdown protection directly into the power device. This design allows the device to be driven directly from a microprocessor output pin due to its low threshold voltage and input current requirements.
The note details the technological overview, including the proprietary strip horizontal layout and integrated control circuit components like temperature and current sensors. It further analyzes the static and dynamic behavior of the device, highlighting features such as short-circuit immunity and over-temperature protection mechanisms.
The device has a nominal current of about 10A.
The device features a gate threshold voltage of 1.5V.
Tests were carried out at different switching frequencies ranging from 10kHz to 20kHz.