Presents a new high voltage MOSFET structure which leads to static as well as dynamic performances far ahead conventional Power MOSFET devices. The impact of the particular features of the device is analyzed and quantified in a case study regarding a DC-DC boost converter, which is used in a power factor corrector (PFC) converter. Results obtained from the analysis of the electrical and thermal behavior of the component in the specific are discussed.
This document presents a performance evaluation of the MDmesh high voltage MOSFET structure within a continuous mode Power Factor Corrector (PFC) boost converter. It analyzes the impact of the device's specific features on electrical and thermal behavior compared to conventional Power MOSFETs.
The note details the advantages of MDmesh technology, including reduced on-state resistance and intrinsic capacitances, which enable higher switching frequencies and smaller component sizes. A specific case study of a 200W PFC converter is used to demonstrate these benefits in a practical application.
| Rated Output Power | 200W |
|---|---|
| Output Voltage | 400V |
| Input Voltage Range | 88V up to 264V |
| Switching Frequency Range | 100-200kHz |
| Output Ripple Voltage | <16V |
| Input Power Factor | >0.99 |
The document focuses on evaluating MDmesh MOSFET performance in a continuous mode PFC boost converter.
The prototype converter is designed for a rated output power of 200W.
The design specifies a maximum output voltage of 450V.
The converter must achieve an input power factor greater than 0.99.