MDmesh™ is a revolutionary technology and a “conceptual” breakthrough in the high voltage power MOSFET area. It is named after the combination of a new vertical drain structure with STMicroelectronics’ well established Mesh Overlay™ layout.
This application note evaluates the performance of the new MDmesh™ high voltage power MOSFET technology compared to a standard STW15NB50 MOSFET. The analysis focuses on electrical and thermal performance within a 360W power supply circuit, specifically examining switching characteristics, on-resistance, and temperature behavior.
| Voltage Rating | >500V |
|---|---|
| On-Resistance (STW15NB30) | 0.35 Ohm |
| On-Resistance (MDmesh™) | 0.37 Ohm |
| Package (STW15NB30) | TO-247 |
| Package (MDmesh™) | TO-220 |
The thermal coefficient is 1.7 at 125°C.
The gate-to-source voltage of the MDmesh™ takes about 100ns less to reach its maximum value.