This article introduces the characteristics of LDMOS technology and the relationship between LDMOS devices and RF performance. By understanding the parameters and characteristics of LDMOS devices, design engineers can better utilize these devices and effectively monitor the semiconductor manufacturing process.
This document is the second installment in a series on LDMOS technology, focusing on circuit-level performance through MOS intrinsic device characteristics. It aims to help RF circuit designers understand the relationship between circuit performance and device characteristics beyond first-order approximations.
The text details specific parameters such as breakdown voltage (BVpss, BVpgg), gate-source current (IGSS), and various capacitances (Cgq, Cgs, Cgd). It also defines device ruggedness in terms of load-mismatch tolerance and reliability under extreme conditions.
A general rule of thumb states that the breakdown voltage should be 2 to 2.5 times the operating voltage.
Careful electrostatic-discharge (ESD) precautions are required since the gate oxide is easily damaged.