This application note introduces the latest addition to STMicroelectronics’ RF Power MOSFET family, the SD2933. The SD2933 is a single-ended, 50 V, 300 W, gold (Au) metallized, N-channel, vertical Power MOSFET, intended for use up to 150 MHz, with exceptionally high gain, and enhanced thermal packaging which makes it ideal for various applications including plasma generation, excitation and FM broadcast applications.
The document introduces the SD2933, a single-ended 50V, 300W N-channel vertical Power MOSFET utilizing double-diffused metal oxide (DMOS) technology. It is designed for frequencies up to 150 MHz and features enhanced thermal packaging suitable for plasma generation, excitation, and FM broadcast applications.
| Voltage rating | 50 V |
|---|---|
| Power rating | 300 W |
| Frequency range | up to 150 MHz |
| Maximum drain current | 40 A |
| Transconductance (gfs) | typically 13 siemens |
| Breakdown voltage minimum rating | 125 V |
The device achieves a typical gain of 23.5 dB and an efficiency of 65%.
The device allows for a maximum power dissipation of approximately 650 W.
The typical operating lifetime is greater than 1 million hours.