STMicroelectronics Manuals - Page 152

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STMicroelectronics manuals, page 152

  • ST STGB3NB60SD handbook

    STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, using the latest high voltage technology based on a patented strip layout, with outstanding performances. The STGB3NB60SD is one of the IGBTs in this family, featuring high input impedance, very low on-voltage drop, high current capability, integrated freewheeling diode, and more. It is suitable for applications such as gas discharge lamps, static relays, motor control, etc.

  • ST STGP3NB60MD - STGB3NB60MD handbook

    STGP3NB60MD - STGB3NB60MD is a N-CHANNEL 3A - 600V TO-220 / D2PAK PowerMESH™ IGBT produced by STMicroelectronics. It has high input impedance, low on-voltage drop, low off losses include tail current, low gate charge, high current capability, high frequency operation and so on.

  • ST STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD handbook

    STGP3NB60K is a N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH™ IGBT from STMicroelectronics, which has high input impedance, low on-voltage drop, low gate charge, high current capability, off losses include tail current, high frequency operation and short circuit rating.

  • ST STGB3NB60HD handbook

    The STGB3NB60HD is a N-channel 3A-600V TO-263 power module produced by ST company. It has high input impedance, low on-voltage drop, low gate charge, high current capability, high frequency operation, and open-circuit losses include tail current.

  • ST STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD handbook

    STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD is a high-performance IGBT produced by STMicroelectronics. This device has high input impedance, low on-voltage drop, low gate charge, high current capability, low off-loss, high frequency operation, etc. It is mainly used in motor control and SMPS and PFC circuits.

  • ST STGB20NB41LZ handbook

    STGB20NB41LZ is an N-channel clamped PowerMESH IGBT with low threshold voltage, low on-voltage drop, low gate charge, high current capability, and high voltage clamping feature. It utilizes the latest high voltage technology based on a patented strip layout, providing outstanding performances.

  • ST STGB20NB37LZ handbook

    STGB20NB37LZ is an N-channel clamped PowerMESH IGBT with low threshold voltage, low on-voltage drop, high current capability, and high voltage clamping feature. It is designed using the latest high voltage technology based on patented strip layout, delivering outstanding performances.

  • ST STGB20NB32LZ/STGB20NB32LZ-1 handbook

    STGB20NB32LZ is an N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT produced by ST. It uses the latest high voltage technology, has outstanding performance, and integrates an emitter-gate zener diode and a collector-gate zener diode, respectively providing ESD protection and high-precision active clamping.

  • ST STGB18N40LZ/STGD18N40LZ handbook

    This document is the specification of STGD18N40LZ - STGB18N40LZ, which introduces the features and characteristics of the product, including rated voltage, electrical characteristics, test circuits, and package dimensions

  • ST STGP14NC60KD/STGF14NC60KD/STGB14NC60KD handbook

    STMicroelectronics N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH™ IGBTs with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short cir- cuit withstand capability.

  • ST STGP12NB60KD/STGB12NB60KD handbook

    STGB12NB60KD is a 600V, 18A IGBT, packaged in TO-220 and D2PAK.

  • ST STGB10NB40LZ handbook

    The STGB10NB40LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT is an advanced family of IGBTs with outstanding performances, designed by STMicroelectronics.

  • ST STGB10NB37LZ handbook(1)

    STGB10NB37LZ is a N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh IGBT produced by STMicroelectronics. It uses the latest high voltage technology, and has the characteristics of low threshold voltage, low turn-on voltage drop, low gate charge, high current capability and high voltage clamping.

  • ST STGB10NB37LZ handbook

    STGB10NB37LZ is a N-channel bipolar transistor launched by SGS-Thomson. It has low threshold voltage, low turn-on voltage drop, high current capacity, high voltage clamping feature, etc. It is used in automotive ignition and other fields.

  • ST STGB10N60L handbook

    STGB10N60L is a N-channel IGBT produced by STMicroelectronics. It has a maximum rated voltage of 600 V and a maximum current of 10 A. It is packaged in D2PAK (TO-263) and has the characteristics of high input impedance (voltage driven), very low on-voltage drop (Vcesat), low threshold voltage (logic level input), high current capability, and switching losses including tail current.